# 923
Cree, Inc. has vastly matured their GaN HEMT MMIC and discrete transistor technologies through the GaN-on-SiC Producibility Program provided by the Defense Production Act Title III Program Office. Products include discrete transistors, modules, and MMICs for applications ranging from DC to millimeter wave. The commercial product offering includes devices for broadband amplifiers, Electronic Warfare, radar, communications, 3G, WiMAX, LTE, S-Band, X-Band, C-Band and Ku-Band.